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Condensed Matter > Materials Science

arXiv:1409.4509 (cond-mat)
[Submitted on 16 Sep 2014]

Title:Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation

Authors:Amit Verma, Santosh Raghavan, Susanne Stemmer, Debdeep Jena
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Abstract:We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ~1.6 x 1014 cm-2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ~68 mA/mm, ~20x times larger than the best demonstrated SrTiO3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO3 in increasing the pinch off voltage of the MESFET.
Comments: Accepted for publication in Applied Physics Letters
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1409.4509 [cond-mat.mtrl-sci]
  (or arXiv:1409.4509v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1409.4509
Related DOI: https://doi.org/10.1063/1.4896275

Submission history

From: Amit Verma [view email]
[v1] Tue, 16 Sep 2014 05:24:41 UTC (518 KB)
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