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Condensed Matter > Materials Science

arXiv:2302.00803 (cond-mat)
[Submitted on 2 Feb 2023 (v1), last revised 16 May 2023 (this version, v2)]

Title:Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors:Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm
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Abstract:Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2302.00803 [cond-mat.mtrl-sci]
  (or arXiv:2302.00803v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2302.00803

Submission history

From: Hadass Shifra Inbar [view email]
[v1] Thu, 2 Feb 2023 00:01:42 UTC (3,159 KB)
[v2] Tue, 16 May 2023 22:31:06 UTC (2,478 KB)
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