Title:Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Abstract:Bismuth films hold promise for potential applications in spintronic devices and topological one-dimensional edge transport. Yet synthesizing high-quality, wafer-scale ultrathin bismuth films on non-metallic substrates remains challenging. Here, we demonstrate the growth of large-area (111) bismuth films with a single epitaxial domain orientation synthesized on InSb (111)B substrates and perform angle-resolved photoemission spectroscopy (ARPES) measurements on 1 to 200-bilayer-thick bismuth films. We find evidence of strong film-substrate interactions, promoting epitaxial stabilization of the (111) orientation and leading to inversion symmetry breaking. Through scanning tunneling microscopy, density functional theory, and ARPES, we resolve the longstanding controversy over the $Z_2$ topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.