Quantum Physics
[Submitted on 20 Jun 2008 (this version), latest version 18 Sep 2008 (v2)]
Title:Long spin coherence in silicon with an electrical spin trap readout
View PDFAbstract: Electrical (current) detection of pulsed magnetic resonance has previously been used to manipulate and readout the state of a single electron spin in GaAs quantum dots, but the nuclear spins in this material provide severe decoherence. Silicon has fewer nuclear spins than GaAs, so the decoherence times of electron spins in silicon are more favourable by around three orders of magnitude, leading to proposals for using them as qubits. These proposals require the ability to readout the spin state of a single electron, and electrical detection is the leading candidate for this. However, previous measurements of electrically detected coherence in silicon has identified decoherence as severe as that in GaAs. Here we show that electrically-detected spin coherence can live for over 100 microseconds: 50 times longer than the previous maximum, using a spin-dependent electron trap rather than the mechanisms used previously. Our high magnetic field also provides 95% electron spin polarization, resulting in the first demonstration of electrically-detected spin coherence for initialized qubits in silicon.
Submission history
From: Gavin Morley [view email][v1] Fri, 20 Jun 2008 18:11:12 UTC (194 KB)
[v2] Thu, 18 Sep 2008 16:12:05 UTC (482 KB)
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