Quantum Physics
[Submitted on 20 Jun 2008 (v1), last revised 18 Sep 2008 (this version, v2)]
Title:Long spin coherence in silicon with an electrical spin trap readout
View PDFAbstract: Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.
Submission history
From: Gavin Morley [view email][v1] Fri, 20 Jun 2008 18:11:12 UTC (194 KB)
[v2] Thu, 18 Sep 2008 16:12:05 UTC (482 KB)
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