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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0511723 (cond-mat)
[Submitted on 30 Nov 2005]

Title:Ballisticity of nanotube FETs: Role of phonon energy and gate bias

Authors:Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov
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Abstract: We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.
Comments: 16 pages, 1 table, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:cond-mat/0511723 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0511723v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0511723
Related DOI: https://doi.org/10.1063/1.2218322

Submission history

From: Dmitri Nikonov [view email]
[v1] Wed, 30 Nov 2005 05:22:00 UTC (338 KB)
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