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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0411129 (cond-mat)
[Submitted on 5 Nov 2004]

Title:Multiple layer local oxidation for fabricating semiconductor nanostructures

Authors:M. Sigrist, A. Fuhrer, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard
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Abstract: Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process.
Comments: 3 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0411129 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0411129v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0411129
Journal reference: Appl. Phys. Lett. 85, 3558 (2004)
Related DOI: https://doi.org/10.1063/1.1809273

Submission history

From: Klaus Ensslin [view email]
[v1] Fri, 5 Nov 2004 07:38:21 UTC (445 KB)
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