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Condensed Matter > Materials Science

arXiv:cond-mat/0407295 (cond-mat)
[Submitted on 12 Jul 2004 (v1), last revised 7 Apr 2005 (this version, v2)]

Title:Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction

Authors:Soumik Mukhopadhyay, I. Das, S. P. Pai, P. Raychaudhuri
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Abstract: We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its kind in a symmetric electrode tunnel junction with single insulating barrier. The bias dependence of TMR shows an extremely sharp zero bias anomaly, which can be considered as a demonstration of the drastic density of states variation around the Fermi level of the half metal. This serves as a strong evidence for the existence of minority spin tunneling states at the half-metal insulator interface.
Comments: 8 pages, 4 figures, Revtex4
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0407295 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0407295v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0407295
Journal reference: Applied Physics Letters 86, 152108 (2005)
Related DOI: https://doi.org/10.1063/1.1901823

Submission history

From: Soumik Mukhopadhyay [view email]
[v1] Mon, 12 Jul 2004 14:48:10 UTC (120 KB)
[v2] Thu, 7 Apr 2005 14:11:04 UTC (87 KB)
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