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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0210104 (cond-mat)
[Submitted on 4 Oct 2002 (v1), last revised 28 Oct 2002 (this version, v2)]

Title:Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide

Authors:S.V.Vyshenski, U.Zeitler, R.J.Haug
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Abstract: Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
Comments: 4 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0210104 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0210104v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0210104
Journal reference: Pis'ma v ZhETF, vol 76, iss 9, pp.665-668 (2002); aka JETP Letters
Related DOI: https://doi.org/10.1134/1.1538291

Submission history

From: Sergei Vyshenski [view email]
[v1] Fri, 4 Oct 2002 14:57:43 UTC (26 KB)
[v2] Mon, 28 Oct 2002 14:44:09 UTC (26 KB)
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