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Condensed Matter > Materials Science

arXiv:cond-mat/0104452 (cond-mat)
[Submitted on 24 Apr 2001]

Title:Electrical current distribution across a metal-insulator-metal structure during bistable switching

Authors:C. Rossel, G. I. Meijer, D. Bremaud, D. Widmer
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Abstract: Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.
Comments: 8 pages, 7 figures, submitted to J. Appl. Phys
Subjects: Materials Science (cond-mat.mtrl-sci)
Report number: IBM Research Report RZ 3336
Cite as: arXiv:cond-mat/0104452 [cond-mat.mtrl-sci]
  (or arXiv:cond-mat/0104452v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0104452
Related DOI: https://doi.org/10.1063/1.1389522

Submission history

From: Charlotte Bolliger [view email]
[v1] Tue, 24 Apr 2001 11:31:08 UTC (310 KB)
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