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Condensed Matter > Materials Science

arXiv:2502.03912 (cond-mat)
[Submitted on 6 Feb 2025]

Title:The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs

Authors:Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou, Panagiotis Dimitrakis
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Abstract:This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom electrode and SiNx at various resistance levels. The findings from the LFN measurements strongly suggest that the multilevel high resistance switching primarily arises from variations in the number of nitrogen vacancies, which in turn modulate the conductivity of conductive filaments (CF). Notably, this modulation does not compromise the quality of the filament's surrounding interface. This research sheds light on the underlying mechanisms of RRAM cells and their potential for advanced memory applications.
Subjects: Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2502.03912 [cond-mat.mtrl-sci]
  (or arXiv:2502.03912v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2502.03912
Related DOI: https://doi.org/10.1109/ICNF57520.2023.10472745

Submission history

From: Alexandros Mavropoulis [view email]
[v1] Thu, 6 Feb 2025 09:33:48 UTC (4,885 KB)
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