Title:Ultra-giant Tunneling Magnetoresistance with Two-dimensional Altermagnetic MBene electrode: from material design to device modeling

Abstract:Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages for exploring applications in spintronics as conductive metals allows for serving as electrode in magnetic tunneling junction (MTJ) and/or manipulation of spincurrent through external field. Through density functional theory calculations, the 2D altermagnet Cr4B3N was predicted to be stable, resulting from a N atom substitution in the FeSe-like CrB bilayer. Both intra- and inter-layered magnetic exchanges between Cr atoms are in antiferromagnetic with the first three neighbours. Leveraging the anisotropic spin-splittings with momentum dependency revealed in band structure, we designed three edge dependent Cr4B3N/square/Cr4B3N in-plane MTJs with the 7 Åvaccume the barrie. We found that the Cr-B vertical edge-assembled electrodes based MTJs exhibited giant tunneling magnetoresistance (TMR) ratios of 91001% , by aligning the conduction channels of the electrodes in parallel and anti-parallel states in the momentum space. Our work deepens and generalizes understanding toward altermagnetic 2D metallic electrode with a newly established metal boride (MBene), and broadens applications of the nanoscale spintronics.