Physics > Applied Physics
[Submitted on 3 Feb 2025]
Title:Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
View PDFAbstract:The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
Submission history
From: Alexandros Mavropoulis [view email][v1] Mon, 3 Feb 2025 13:38:31 UTC (500 KB)
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