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Computer Science > Hardware Architecture

arXiv:2411.18114 (cs)
[Submitted on 27 Nov 2024]

Title:A 65-nm Reliable 6T CMOS SRAM Cell with Minimum Size Transistors

Authors:Gabriel Torrens (1), Bartomeu Alorda (1), Cristian Carmona (1), Daniel Malagon-Perianez (1), Jaume Segura (1), Sebastia Antoni Bota (1) ((1) University of the Balearic Islands)
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Abstract:As minimum area SRAM bit-cells are obtained when using cell ratio and pull-up ratio of 1, we analyze the possibility of decreasing the cell ratio from the conventional values comprised between 1.5-2.5 to 1. The impact of this option on area, power, performance and stability is analyzed showing that the most affected parameter is read stability, although this impact can be overcome using some of the read assist circuits proposed in the literature. The main benefits are layout regularity enhancement, with its consequent higher tolerance to variability, cell area reduction by 25% (with respect to a cell having a cell ratio of 2), leakage current improvement by a 35%, as well as energy dissipation reduction and a soft error rate per bit improvement of around 30%.
Comments: 9 pages, 13 figures
Subjects: Hardware Architecture (cs.AR)
Cite as: arXiv:2411.18114 [cs.AR]
  (or arXiv:2411.18114v1 [cs.AR] for this version)
  https://doi.org/10.48550/arXiv.2411.18114
Journal reference: IEEE Transactions on Nuclear Science, vol. 7, no. 3, pp. 447-455, Jul-Sep 2019
Related DOI: https://doi.org/10.1109/TETC.2017.2721932

Submission history

From: Gabriel Torrens Caldentey [view email]
[v1] Wed, 27 Nov 2024 07:51:45 UTC (346 KB)
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