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Condensed Matter > Materials Science

arXiv:2304.08339 (cond-mat)
[Submitted on 17 Apr 2023 (v1), last revised 18 Apr 2023 (this version, v2)]

Title:Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy

Authors:Clemens Todt, Sjoerd Telkamp, Filip Krizek, Christian Reichl, Mihai Gabureac, Rüdiger Schott, Erik Cheah, Peng Zeng, Thomas Weber, Arnold Müller, Christof Vockenhuber, Mohsen Bahrami Panah, Werner Wegscheider
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Abstract:We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around $9 \textrm{K}$. and critical perpendicular magnetic fields of up to $B_{c2} = 1.4 \textrm{T}$ at $4.2 \textrm{K}$. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.
Comments: 12 pages paper, 9 pages supplementary, 6 figures paper, 7 figures supplementary
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2304.08339 [cond-mat.mtrl-sci]
  (or arXiv:2304.08339v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2304.08339

Submission history

From: Clemens Todt [view email]
[v1] Mon, 17 Apr 2023 15:01:18 UTC (40,308 KB)
[v2] Tue, 18 Apr 2023 14:30:08 UTC (40,308 KB)
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