Title:Exciton spectrum in atomically thin monolayers: The role of hBN encapsulation

Abstract:The high-quality structures containing semiconducting transition metal dichalcogenides (S-TMDs) monolayer (MLs) required for optical and electrical studies are achieved by their encapsulation in hexagonal BN (hBN) flakes. To examine the effect of hBN thickness in these systems, we consider a model with an S-TMD ML placed between a semi-infinite in the out-of-plane direction substrate and complex top cover layers: a layer of finite thickness, adjacent to the ML, and a semi-infinite in the out-of-plane direction top part. We obtain the expression for the Coulomb potential. Using this result we demonstrate that the energies of excitonic $s$ states in the structure with WSe$_2$ ML change significantly for the top hBN with thickness $<$30 layers. We observed that the excitonic binding energy ($E_b$) is reduced by almost 40\% in the transition from the sample without the top hBN layer ($E_b$=256 meV) to the one with an infinite thickness of the top hBN layer ($E_b$=165 meV).