Title:Topological semimetal phases in a family of monolayer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) with abundant nodal lines and nodes

Abstract:The electronic and topological properties of single-layer X3YZ6 (X=Nb,Ta, Y=Si,Ge,Sn, Z=S,Se,Te) materials have been studied with the aid of first principles calculations. This kind of materials belong to topological semimetals (TMs) with abundant nodal lines and nodes. Considering their similar properties, we focus on the analysis of Ta3SnTe6 and Ta3SiSe6. They have coexisting type-I nodal lines and type-II Dirac points in the absent of spin-orbit coupling (SOC). The nodal lines become Dirac points and original Dirac points disappear in the present of SOC. The three-dimensional (3D) band diagrams reproduce vividly the characteristics of nodes and nodal lines. The appearance of flat bands in (110) edge states further confirm their nontrivial topological properties. We also explore the relationship among different nodal lines (nodes), crystal symmetry and SOC. The type-I nodal lines are protected by crystal symmetry in the absent of SOC. When crystal symmetry is broken, the band structure splits further in the present of SOC. The single-layer X3YZ6 materials can be used as candidates for two-dimensional (2D) TMs and provide a platform for further study of interesting physical phenomena.