Title:Hot-carrier dynamics in InAs/AlAsSb multi-quantum wells

Abstract:A type-II InAs/AlAs$_{0.16}$Sb$_{0.84}$ multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the bandgap, and probed with a terahertz (THz) probe pulse. The transient THz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times ($\sim$1 nanosecond) and a metastable state of ($\sim$5 picosecond) for an excess-photon energy of $>100$ meV. For sufficient excess-photon energy, excitation of the metastable state (seen as a plateau in the transient response) is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a near-direct band gap ($E{_g}$) density of states with an Urbach tail below $E{_g}$. As temperature increases, the long-lived decay times increase $<E{_g}$, due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers $>E{_g}$. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers in such systems.