Condensed Matter > Materials Science
[Submitted on 28 Jan 2021 (v1), last revised 1 Apr 2021 (this version, v2)]
Title:Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
View PDFAbstract:We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 {\mu}m telecom O-band with the fine structure splitting as low as 16 {\mu}eV, thus making them suitable as photon sources in quantum communication networks using entangled photons.
Submission history
From: Artur Tuktamyshev [view email][v1] Thu, 28 Jan 2021 19:16:36 UTC (602 KB)
[v2] Thu, 1 Apr 2021 12:27:37 UTC (602 KB)
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