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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2004.09170 (cond-mat)
[Submitted on 20 Apr 2020]

Title:Morphology and magneto-transport in exfoliated graphene on ultrathin crystalline \b{eta}-Si3N4(0001)/Si(111)

Authors:Sedighe Salimian, Shaohua Xiang, Stefano Colonna, Fabio Ronci, Marco Fosca, Francesco Rossella, Fabio Beltram, Roberto Flammini, Stefan Heun
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Abstract:We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 film was grown on Si(111) under ultra-high vacuum (UHV) conditions and investigated by scanning tunneling microscopy (STM). Subsequently, a graphene flake was deposited on top of it by a polymer-based transfer technique, and a Hall bar device was fabricated from the graphene flake. STM was employed again to study the graphene flake under UHV conditions after device fabrication and showed that surface quality is preserved. Electrical transport measurements, carried out at low temperature in magnetic field, revealed back gate modulation of carrier type and density in the graphene channel and showed the occurrence of weak localization. Under these experimental conditions, no leakage current between back gate and graphene channel was detected.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); Applied Physics (physics.app-ph)
Cite as: arXiv:2004.09170 [cond-mat.mes-hall]
  (or arXiv:2004.09170v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2004.09170
Journal reference: Adv. Mater. Interfaces 2020, 1902175
Related DOI: https://doi.org/10.1002/admi.201902175

Submission history

From: Stefan Heun [view email]
[v1] Mon, 20 Apr 2020 09:54:19 UTC (1,186 KB)
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