Title:Extracting Dimensional Parameters of Gratings Produced with Self-Aligned Multiple Patterning Using GISAXS

Abstract:To ensure consistent and high-quality semiconductor production, additional metrology tools are needed to measure the smallest structures. Due to its high statistical power and the well-known X-ray optical constants, small-angle X-ray scattering (SAXS) is being considered for this purpose. Compared to transmission SAXS, signal intensities can be enhanced dramatically by using small incidence angles in reflection geometry (Grazing-Incidence SAXS, GISAXS), enabling quick measurements. The capability to reconstruct average line shapes from GISAXS measurements of gratings has already been proven. However, GISAXS has so far not been used to reconstruct line shapes of gratings with pitches smaller than 50 nm, which are standard in current-generation semiconductor manufacturing. In this paper, GISAXS is used to reconstruct the line profile of a grating with 32 nm pitch produced by self-aligned quadruple patterning (SAQP). It is found that the reconstructed shape is generally in agreement with previously published SAXS results. However, the reconstructed line height and line width show deviations of 1.0(2) nm and 2.0(7) nm, respectively. Additionally, a series of grating samples with deliberately introduced pitchwalk was measured. Here, it is found that GISAXS yields the pitchwalk in agreement with the SAXS results, with uncertainties ranging from $u<0.5$ nm for small pitchwalks ($<2$ nm) up to $u \approx 2$ nm for larger pitchwalks.