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Condensed Matter > Materials Science

arXiv:1705.04071 (cond-mat)
[Submitted on 11 May 2017 (v1), last revised 12 May 2017 (this version, v2)]

Title:Structural, Chemical and Optical Properties of Cerium Dioxide Film Prepared by Atomic Layer Deposition on TiN and Si Substrates

Authors:S. Vangelista, R.Piagge, S. Ek, T. Sarnet, G. Ghidini, C. Martella, A. Lamperti
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Abstract:Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 °C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films differ in interface roughness depending on the substrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Si and around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy (XPS). Such values indicate a ~10% off-stoichiometry and are indicative of the presence of oxygen vacancies in the films. Nonetheless, CeO2 bandgap energy and refractive index at 550 nm are 3.54+/-0.63 eV and 2.3 for CeO2/Si, and 3.63+/-0.18 eV and 2.4 for CeO2/TiN, respectively. Our results extend the knowledge on the structural and chemical properties of ALD-deposited CeO2 either on Si or TiN substrates, underlying films differences and similarities, thus contributing to boost the use of CeO2 through ALD deposition as foreseen in a wide number of applications.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1705.04071 [cond-mat.mtrl-sci]
  (or arXiv:1705.04071v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1705.04071
Related DOI: https://doi.org/10.1016/j.tsf.2017.05.034

Submission history

From: Silvia Vangelista Dr [view email]
[v1] Thu, 11 May 2017 08:40:42 UTC (1,844 KB)
[v2] Fri, 12 May 2017 10:01:59 UTC (1,845 KB)
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