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Condensed Matter > Materials Science

arXiv:1612.07980v1 (cond-mat)
[Submitted on 23 Dec 2016 (this version), latest version 3 Jan 2017 (v2)]

Title:Strain and Water Effects on the Electronic Structure and Chemical Activity of In-Plane Graphene/Silicene Heterostructure

Authors:Andrey A Kistanov, Yongqing Cai, Yong-Wei Zhang, Sergey V Dmitriev, Kun Zhou
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Abstract:By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from -7% (compression) to +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1612.07980 [cond-mat.mtrl-sci]
  (or arXiv:1612.07980v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1612.07980

Submission history

From: Andrey Kistanov [view email]
[v1] Fri, 23 Dec 2016 14:23:22 UTC (2,186 KB)
[v2] Tue, 3 Jan 2017 15:45:30 UTC (2,027 KB)
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