Title:Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO3/SrTiO3 Nanowires

Abstract:SrTiO3-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that nearly ideal 1D electron waveguides exhibiting quantized ballistic transport of electrons and (non-superconducting) electron pairs can be formed at the interface between the two band insulators LaAlO3 and SrTiO3. These electron waveguides are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique that enables nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface. Quantized ballistic transport within conducting nanowires at low temperature ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest e^2/h plateau indicate a ballistic mean-free path l_MF~20 um, roughly an order of magnitude larger than in III-V nanowires. Non-superconducting electron pairs are found to be stable in magnetic fields as high as B=11 T, and propagate ballistically with quantized conduction 2e^2/h. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO3/SrTiO3 system and offers a new platform for the study of strongly interacting 1D electronic systems.