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Physics > Instrumentation and Detectors

arXiv:1609.05250 (physics)
[Submitted on 16 Sep 2016 (v1), last revised 28 Nov 2016 (this version, v2)]

Title:Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

Authors:N. Savic, J. Beyer, A. La Rosa, A. Macchiolo, R. Nisius
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Abstract:In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more ra- diation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 um recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.
Subjects: Instrumentation and Detectors (physics.ins-det); High Energy Physics - Experiment (hep-ex)
Cite as: arXiv:1609.05250 [physics.ins-det]
  (or arXiv:1609.05250v2 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1609.05250
Related DOI: https://doi.org/10.1088/1748-0221/11/12/C12008

Submission history

From: Natascha Savic [view email]
[v1] Fri, 16 Sep 2016 22:29:33 UTC (1,299 KB)
[v2] Mon, 28 Nov 2016 15:59:15 UTC (1,297 KB)
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