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Condensed Matter > Materials Science

arXiv:1609.01092 (cond-mat)
[Submitted on 5 Sep 2016]

Title:A model for pressurized hydrogen induced thin film blisters

Authors:R.A.J.M. van den Bos, V. Reshetniak, C.J. Lee, J. Benschop, F. Bijkerk
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Abstract:We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed. In the first part, the energy balance required for a stable blister is calculated. From this model, the adhesion energy of the blister cap, the internal pressure and the critical H-dose for blister formation can be calculated. In the second part, the flux balance required for a blister to grow to a stable size is calculated. The model is applied to blisters formed in a Mo/Si multilayer after being exposed to hydrogen ions. From the model the adhesion energy of the Mo/Si blister cap was calculated to be around 1.05 J/m2 with internal pressures in the range of 175-280 MPa. Based on the model a minimum ion dose for the onset of blister formation was calculated to be d = 4.2*10^18 ions/cm2. From the flux balance equations the diffusion constant for the Mo/Si blister cap was estimated to be D_H2 = (10+-1) *10^18 cm2/s.
Comments: 7 pages, 6 figures, 2 tables
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1609.01092 [cond-mat.mtrl-sci]
  (or arXiv:1609.01092v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1609.01092
Journal reference: J. Appl. Phys. 120, 235304 (2016)
Related DOI: https://doi.org/10.1063/1.4972221

Submission history

From: Rogier Van Den Bos [view email]
[v1] Mon, 5 Sep 2016 10:54:12 UTC (2,281 KB)
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