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Condensed Matter > Materials Science

arXiv:1607.02569 (cond-mat)
[Submitted on 9 Jul 2016]

Title:Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Authors:K. Levchenko, T. Andrearczyk, J. Z. Domagala, J. Sadowski, L. Kowalczyk, M. Szot, R. Kuna, T. Figielski, T. Wosinski
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Abstract:Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices.
Comments: 10 pages, 3 figures, to be published in the Proceedings of ICSM-2016 conference
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1607.02569 [cond-mat.mtrl-sci]
  (or arXiv:1607.02569v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1607.02569

Submission history

From: Janusz Sadowski [view email]
[v1] Sat, 9 Jul 2016 06:38:54 UTC (256 KB)
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