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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1606.08119 (cond-mat)
[Submitted on 27 Jun 2016]

Title:Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

Authors:R. Islam, M. M. Uddin, M. Mofazzal Hossain, M. B. Santos, M. A. Matin, Y. Hirayama
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Abstract:The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation frequency (fmax) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.
Comments: 17 pages
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:1606.08119 [cond-mat.mes-hall]
  (or arXiv:1606.08119v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1606.08119

Submission history

From: Uddin Md Mohi [view email]
[v1] Mon, 27 Jun 2016 03:51:21 UTC (995 KB)
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