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Physics > Instrumentation and Detectors

arXiv:1606.00509 (physics)
[Submitted on 2 Jun 2016]

Title:High Current Density 2D/3D Esaki Tunnel Diodes

Authors:Sriram Krishnamoorthy, Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan
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Abstract:The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.
Subjects: Instrumentation and Detectors (physics.ins-det); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1606.00509 [physics.ins-det]
  (or arXiv:1606.00509v1 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1606.00509
Related DOI: https://doi.org/10.1063/1.4966283

Submission history

From: Sriram Krishnamoorthy [view email]
[v1] Thu, 2 Jun 2016 00:12:19 UTC (1,435 KB)
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