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Condensed Matter > Materials Science

arXiv:1411.5267v1 (cond-mat)
[Submitted on 19 Nov 2014 (this version), latest version 28 Jun 2016 (v2)]

Title:Universal domain wall dynamics under electric field in Ta/Co40Fe40B20/MgO devices with perpendicular anisotropy

Authors:Weiwei Lin, Nicolas Vernier, Guillaume Agnus, Karin Garcia, Berthold Ocker, Weisheng Zhao, Eric E. Fullerton, Dafiné Ravelosona
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Abstract:Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effect on DW velocity has been only observed so far in the creep regime where DW velocity is low due to a strong interaction with pinning sites. Here, we show gate voltage modulation of DW velocity within the creep, intermediate depinning, depinning and flow regimes with velocities up to 20 m/s in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of this effect over the full range of DW dynamics by taking into account an effective magnetic field being linear with the electric field. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.
Comments: 19 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Applied Physics (physics.app-ph)
Cite as: arXiv:1411.5267 [cond-mat.mtrl-sci]
  (or arXiv:1411.5267v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1411.5267

Submission history

From: Weiwei Lin [view email]
[v1] Wed, 19 Nov 2014 15:55:33 UTC (928 KB)
[v2] Tue, 28 Jun 2016 16:20:50 UTC (891 KB)
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