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Condensed Matter > Materials Science

arXiv:1409.3683 (cond-mat)
[Submitted on 12 Sep 2014]

Title:Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission

Authors:C. Himwas, M. den Hertog, Le Si Dang, E. Monroy, R. Songmuang
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Abstract:The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localization signatures in their optical characteristics i.e. red shift of the emission, s-shaped temperature dependence and linewidth broadening. Despite these alloy fluctuations, the emission energy of AlGaN/AlN NDs can be tuned in the 240-350 nm range with internal quantum efficiencies around 30%.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1409.3683 [cond-mat.mtrl-sci]
  (or arXiv:1409.3683v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1409.3683
Related DOI: https://doi.org/10.1063/1.4904989

Submission history

From: Rudeesun Songmuang [view email]
[v1] Fri, 12 Sep 2014 09:17:19 UTC (1,064 KB)
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