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Condensed Matter > Materials Science

arXiv:1409.2862 (cond-mat)
[Submitted on 8 Sep 2014]

Title:Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

Authors:Isaac Childres, Luis A. Jauregui, Yong P. Chen
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Abstract:We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (Vg) for various irradiation dosages (Re). We study effects in the Raman spectra due to Vg-induced doping and artificially created disorder at various Re. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (nFE) exhibits a minimum in peak frequency and a maximum in peak width near the charge- neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I2D/IG and weak maximum in ID/IG near the CNP. All the observed dependences of Raman parameters on nFE weaken at stronger disorder (higher Re), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.
Comments: 16 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1409.2862 [cond-mat.mtrl-sci]
  (or arXiv:1409.2862v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1409.2862
Related DOI: https://doi.org/10.1063/1.4903959

Submission history

From: Isaac Childres [view email]
[v1] Mon, 8 Sep 2014 20:30:10 UTC (4,098 KB)
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