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Condensed Matter > Materials Science

arXiv:1407.2258 (cond-mat)
[Submitted on 8 Jul 2014]

Title:Performance limits projection of black phosphorous field-effect transistors

Authors:Kai-Tak Lam, Zhipeng Dong, Jing Guo
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Abstract:Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the "armchair" direction which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20 nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of 4 orders. Monolayer BP FETs outperform both MoS$_2$ and Si FETs for both n- and p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.
Comments: 5 pages, 1 table, 4 figures (Submitted; Accepted)
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1407.2258 [cond-mat.mtrl-sci]
  (or arXiv:1407.2258v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1407.2258
Related DOI: https://doi.org/10.1109/LED.2014.2333368

Submission history

From: Kai-Tak Lam [view email]
[v1] Tue, 8 Jul 2014 20:04:59 UTC (281 KB)
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