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Condensed Matter > Strongly Correlated Electrons

arXiv:1407.2038 (cond-mat)
[Submitted on 8 Jul 2014]

Title:Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Authors:P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant, L. Cario
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Abstract:Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.
Comments: Accepted for publication in Physical Review B
Subjects: Strongly Correlated Electrons (cond-mat.str-el); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1407.2038 [cond-mat.str-el]
  (or arXiv:1407.2038v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.1407.2038

Submission history

From: Pablo Stoliar [view email]
[v1] Tue, 8 Jul 2014 11:22:59 UTC (2,284 KB)
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