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Condensed Matter > Materials Science

arXiv:1301.7010 (cond-mat)
[Submitted on 29 Jan 2013 (v1), last revised 27 Feb 2013 (this version, v3)]

Title:Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

Authors:K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin, V. Ya. Resnik, M. S. Storozhevykh, V. A. Yuryev
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Abstract:Nickel silicide Schottky diodes formed on polycrystalline Si<P> films are proposed as temperature sensors of monolithic uncooled microbolometer IR focal plane arrays. Structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as multi-phase compound composed by 20 to 40% of Ni3Si, 30 to 60% of Ni2Si and 10 to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from ~100 to ~20 for the temperature increasing from 22 to 70C; they exceed 1000 at 80K. A barrier of ~0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-emf spectra at 80K and attributed to the Ni-silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3 to 0.6%/K for forward biasing and around 2.5%/K for reverse biasing of the diodes.
Comments: 18 pages, 7 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Instrumentation and Detectors (physics.ins-det); Optics (physics.optics)
Cite as: arXiv:1301.7010 [cond-mat.mtrl-sci]
  (or arXiv:1301.7010v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1301.7010
Journal reference: Nanoscale Research Letters 2013, 8:177 (URL: http://www.nanoscalereslett.com/content/8/1/177)
Related DOI: https://doi.org/10.1186/1556-276X-8-177

Submission history

From: Vladimir Yuryev [view email]
[v1] Tue, 29 Jan 2013 18:19:17 UTC (2,391 KB)
[v2] Thu, 31 Jan 2013 20:43:11 UTC (2,328 KB)
[v3] Wed, 27 Feb 2013 16:36:14 UTC (3,229 KB)
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