Physics > Instrumentation and Detectors
[Submitted on 14 Dec 2012 (v1), last revised 15 Feb 2013 (this version, v2)]
Title:Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade
View PDFAbstract:In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
Submission history
From: Marco Bomben [view email][v1] Fri, 14 Dec 2012 20:13:27 UTC (425 KB)
[v2] Fri, 15 Feb 2013 14:10:42 UTC (425 KB)
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