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Condensed Matter > Materials Science

arXiv:1011.5152 (cond-mat)
[Submitted on 23 Nov 2010]

Title:Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

Authors:Martin Heiß, Bernt Ketterer, Emanuele Uccelli, Joan Ramon Morante, Jordi Arbiol, Anna Fontcuberta i Morral
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Abstract:Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1011.5152 [cond-mat.mtrl-sci]
  (or arXiv:1011.5152v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1011.5152
Related DOI: https://doi.org/10.1088/0957-4484/22/19/195601

Submission history

From: Martin Heiß [view email]
[v1] Tue, 23 Nov 2010 16:38:11 UTC (2,146 KB)
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