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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1011.5127 (cond-mat)
[Submitted on 23 Nov 2010 (v1), last revised 28 Jun 2011 (this version, v2)]

Title:Influence of Interface Traps and Electron-Hole Puddles on Quantum Capacitance and Conductivity in Graphene Field-Effect Transistors

Authors:G.I. Zebrev, E.V. Melnik, A.A. Tselykovskiy
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Abstract:We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent electrostatic consideration and taking into account the interface trap capacitance the explicit analytic expressions for charge carrier density and the quantum capacitance as functions of the gate voltage were obtained. This allows to extract the interface trap capacitance and density of interface states from the gate capacitance measurements. It has shown that self-consistent account of the interface trap capacitance enables to reconcile discrepancies in universal quantum capacitance vs the Fermi energy extracted for different samples. The electron-hole puddles and the interface traps impact on transfer I-V characteristics and conductivity has been investigated. It has been shown that variety of widths of resistivity peaks in various samples could be explained by different interface trap capacitance values.
Comments: 17 pages, 16 figures, extended and revised version
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1011.5127 [cond-mat.mes-hall]
  (or arXiv:1011.5127v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1011.5127

Submission history

From: Gennady Zebrev I. [view email]
[v1] Tue, 23 Nov 2010 15:05:09 UTC (509 KB)
[v2] Tue, 28 Jun 2011 15:16:29 UTC (529 KB)
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