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Condensed Matter > Materials Science

arXiv:1011.4386 (cond-mat)
[Submitted on 19 Nov 2010]

Title:Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Authors:Bilal Gokce, David E. Aspnes, Gerald Lucovsky, Kenan Gundogdu
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Abstract:It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.
Comments: 9 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:1011.4386 [cond-mat.mtrl-sci]
  (or arXiv:1011.4386v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1011.4386
Related DOI: https://doi.org/10.1063/1.3537809

Submission history

From: Kenan Gundogdu [view email]
[v1] Fri, 19 Nov 2010 10:28:47 UTC (2,040 KB)
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