Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 2 Nov 2010 (v1), last revised 17 Nov 2010 (this version, v3)]
Title:Charged basal stacking fault (BSF) scattering in nitride semiconductors
View PDFAbstract:A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.
Submission history
From: Aniruddha Konar [view email][v1] Tue, 2 Nov 2010 05:24:16 UTC (156 KB)
[v2] Fri, 5 Nov 2010 15:25:40 UTC (156 KB)
[v3] Wed, 17 Nov 2010 22:37:48 UTC (157 KB)
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