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Condensed Matter > Materials Science

arXiv:1008.4050 (cond-mat)
[Submitted on 24 Aug 2010]

Title:Application of scanning mid-IR-laser microscopy for characterization of semiconductor materials for photovoltaics

Authors:V. P. Kalinushkin, O. V. Astafiev, V. A. Yuryev
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Abstract:The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a promising material for photovoltaics - and multicrystalline silicon for solar cells. In addition, this technique was shown to be appropriate for imaging of polishing-induced defects as well as such huge defects as "pin holes". Besides, previously unexplained "anomalous" (cubic power) dependence of signal of the scanning mid-IR-laser microscope in the optical-beam-induced light scattering mode on the photoexcitation power obtained for mechanically polished samples has now been attributed to the excess carrier scattering on charged linear defects, likely dislocation lines. The conclusion is made in the article that the scanning mid-IR-laser microscopy may serve as very effective tool for defect investigations in materials for modern photovoltaics.
Subjects: Materials Science (cond-mat.mtrl-sci); Optics (physics.optics)
Cite as: arXiv:1008.4050 [cond-mat.mtrl-sci]
  (or arXiv:1008.4050v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1008.4050
Journal reference: Solar Energy Materials & Solar Cells 65 (2001) 47-54
Related DOI: https://doi.org/10.1016/S0927-0248%2800%2900076-3

Submission history

From: Vladimir Yuryev [view email]
[v1] Tue, 24 Aug 2010 14:13:07 UTC (1,111 KB)
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