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Physics > Instrumentation and Detectors

arXiv:1007.4432 (physics)
[Submitted on 26 Jul 2010 (v1), last revised 14 Oct 2010 (this version, v2)]

Title:Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Authors:Julian Becker, Eckhart Fretwurst, Robert Klanner
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Abstract:The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice.
This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30°C and 50°C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.
Comments: revised version after peer review
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:1007.4432 [physics.ins-det]
  (or arXiv:1007.4432v2 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1007.4432
Related DOI: https://doi.org/10.1016/j.sse.2010.10.00

Submission history

From: Julian Becker [view email]
[v1] Mon, 26 Jul 2010 12:10:01 UTC (687 KB)
[v2] Thu, 14 Oct 2010 07:23:22 UTC (725 KB)
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