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Condensed Matter > Materials Science

arXiv:1003.3136 (cond-mat)
[Submitted on 16 Mar 2010]

Title:Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots

Authors:E.S. Zhukova, B.P. Gorshunov, A.S. Prokhorov, I.E. Spektor, Yu.G. Goncharov, L.V. Arapkina, V.A. Chapnin, V.P. Kalinushkin, G.N. Mikhailova, V.A. Yuryev
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Abstract:With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K.
Comments: Proc. 33rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2008), September 15-19, 2008, California Institute of Technology, Pasadena, California, USA.
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Optics (physics.optics)
Cite as: arXiv:1003.3136 [cond-mat.mtrl-sci]
  (or arXiv:1003.3136v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1003.3136
Journal reference: 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 15-19 Sept. 2008, Pasadena, CA, p. 1-2
Related DOI: https://doi.org/10.1109/ICIMW.2008.4665871

Submission history

From: Vladimir Yuryev [view email]
[v1] Tue, 16 Mar 2010 12:40:17 UTC (363 KB)
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