Condensed Matter > Other Condensed Matter
[Submitted on 12 Nov 2004 (v1), last revised 20 May 2005 (this version, v2)]
Title:Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation
View PDFAbstract: Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mueff as a function of the effective vertical field Eeff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120 % for strained Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained Si/ Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/ Si interface roughness, as well as surface roughness of the SiGe substrate on which strained Si is grown.
Submission history
From: Arnaud Bournel [view email][v1] Fri, 12 Nov 2004 15:34:16 UTC (247 KB)
[v2] Fri, 20 May 2005 14:29:06 UTC (283 KB)
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