Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 8 Jun 2003 (v1), last revised 11 Jun 2003 (this version, v2)]
Title:A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
View PDFAbstract: We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.
Submission history
From: Jing Guo [view email][v1] Sun, 8 Jun 2003 02:41:33 UTC (278 KB)
[v2] Wed, 11 Jun 2003 01:27:38 UTC (148 KB)
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