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Condensed Matter > Materials Science

arXiv:2412.14564 (cond-mat)
[Submitted on 19 Dec 2024 (v1), last revised 6 Mar 2025 (this version, v2)]

Title:Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry

Authors:Ami M. Shirai, Yuta Murotani, Tomohiro Fujimoto, Natsuki Kanda, Jun Yoshinobu, Ryusuke Matsunaga
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Abstract:Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature. Linearly polarized pump pulses excite electrons and holes with asymmetric distributions in momentum space, leading to in-plane anisotropic conductivity. By varying the polarization directions of the pump light relative to the in-plane crystalline axes, the valley polarization of electrons and the momentum asymmetry of holes are separately probed through observing the polarization rotation of THz pulses. We demonstrate that the valley relaxation time of electrons near the conduction band minimum exceeds 1.5 ps at room temperature, in good agreement with theoretically calculated intervalley phonon scattering with f process. This work paves the way for Si-based room-temperature valleytronics.
Comments: 17 pages, 3 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2412.14564 [cond-mat.mtrl-sci]
  (or arXiv:2412.14564v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2412.14564
Journal reference: Physical Review B, 111, L121201 (2025)
Related DOI: https://doi.org/10.1103/PhysRevB.111.L121201

Submission history

From: Ami Mi Shirai [view email]
[v1] Thu, 19 Dec 2024 06:28:54 UTC (746 KB)
[v2] Thu, 6 Mar 2025 02:53:13 UTC (757 KB)
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