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Physics > Instrumentation and Detectors

arXiv:2407.21378 (physics)
[Submitted on 31 Jul 2024 (v1), last revised 16 Sep 2024 (this version, v2)]

Title:Characterization of the RD50-MPW4 HV-CMOS pixel sensor

Authors:B.Pilsl, T. Bergauer, R. Casanova, H. Handerkas, C. Irmler, U. Kraemer, R. Marco-Hernandez, J. Mazorra de Cos, F. R. Palomo, S. Powell, P. Sieberer, J. Sonneveld, H. Steininger, E. Vilella, B. Wade, C. Zhang, S. Zhang
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Abstract:The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.
Comments: Preprint version of Proceedings of Pisa meeting 2024
Subjects: Instrumentation and Detectors (physics.ins-det); High Energy Physics - Experiment (hep-ex)
Cite as: arXiv:2407.21378 [physics.ins-det]
  (or arXiv:2407.21378v2 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.2407.21378
Related DOI: https://doi.org/10.1016/j.nima.2024.169839

Submission history

From: Bernhard Pilsl [view email]
[v1] Wed, 31 Jul 2024 06:59:30 UTC (307 KB)
[v2] Mon, 16 Sep 2024 08:37:47 UTC (217 KB)
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