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Condensed Matter > Materials Science

arXiv:2407.19197 (cond-mat)
[Submitted on 27 Jul 2024]

Title:Role of Domain Walls on Imprint and Fatigue in HfO2-Based Ferroelectrics

Authors:Muting Xie, Hongyu Yu, Binhua Zhang, Changsong Xu, Hongjun Xiang
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Abstract:HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect device lifetime and memory capabilities. Here, to accurately describe the dynamics and field effects of HfO2, we adopt our newly developed DREAM-Allegro network scheme and develop a comprehensive machine-learning model for HfO2. Such model can not only predict the interatomic potential, but also predict Born effective charges. Applying such model, we explore the role of domain dynamics in HfO2 and find that the fatigue and imprint phenomena are closely related to the so-called E-path and T-path switching pathways. Based on the different atomic motions in the two paths, we propose that an inclined electric field can sufficiently suppress fatigue and enhancing the performance of HfO2-based ferroelectric devices.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2407.19197 [cond-mat.mtrl-sci]
  (or arXiv:2407.19197v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2407.19197

Submission history

From: Muting Xie [view email]
[v1] Sat, 27 Jul 2024 07:32:51 UTC (806 KB)
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