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Condensed Matter > Materials Science

arXiv:2406.19618 (cond-mat)
[Submitted on 28 Jun 2024]

Title:Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement

Authors:Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Jae-Hoon Han, Sang-Hyeon Kim
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Abstract:Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND and embedded flash (eFlash), with recent progress in achieving large memory window (MW) using metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) gate stacks. Although the physical origin of the large MW in the MIFIS stack has already been discussed, its retention characteristics have not been explored yet. Here, we demonstrate MIFIS FEFET with a maximum MW of 9.7 V, and show that MIFIS FEFET has unstable retention characteristics, especially after erase. We discover the origin of the unstable retention characteristics and prove our hypothesis with absolute polarization measurement and different operation modes, showing that the unstable retention characteristics is a fundamental issue. Based on the understanding, we discuss a novel charge compensation model and promising engineering methodologies to achieve stable retention in MIFIS FEFET.
Comments: We are submitting this to an IEEE journal but because of delays, we would like to share the information
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2406.19618 [cond-mat.mtrl-sci]
  (or arXiv:2406.19618v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2406.19618

Submission history

From: Songhyeon Kuk [view email]
[v1] Fri, 28 Jun 2024 03:01:41 UTC (629 KB)
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