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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:2406.06112 (cond-mat)
[Submitted on 10 Jun 2024]

Title:Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film

Authors:Renjie Xie, Min Ge, Shaozhu Xiao, Jiahui Zhang, Jiachang Bi, Xiaoyu Yuan, Hee Taek Yi, Baomin Wang, Seongshik Oh, Yanwei Cao, Xiong Yao
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Abstract:Highly crystalline and easily feasible topological insulator-superconductor (TI-SC) heterostructures are crucial for the development of practical topological qubit devices. The optimal superconducting layer for TI-SC heterostructures should be highly resilient against external contaminations and structurally compatible with TIs. In this study, we provide a solution to this challenge by showcasing the growth of a highly crystalline TI-SC heterostructure using refractory TiN (111) as the superconducting layer. This approach can eliminate the need for in-situ cleaving or growth. More importantly, the TiN surface shows high resilience against contaminations during air exposure, as demonstrated by the successful recyclable growth of Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride films are compatible with device fabrication techniques, paving a path to the realization of practical topological qubit devices in the future.
Comments: 22 pages, 4 figures, accepted by ACS Applied Materials & Interfaces
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Superconductivity (cond-mat.supr-con)
Cite as: arXiv:2406.06112 [cond-mat.mes-hall]
  (or arXiv:2406.06112v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.2406.06112
Related DOI: https://doi.org/10.1021/acsami.4c05656

Submission history

From: Xiong Yao [view email]
[v1] Mon, 10 Jun 2024 08:51:11 UTC (772 KB)
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